onsemi launched its GaNEXUS™ gallium nitride (GaN) power portfolio, with the initial sampling of GaNEXUS FETs across voltage ranges from 40V to 650V as well as its GaNEXUS Smart 650V GaN FETs. The portfolio is ideally suited for power-hungry applications including AI
Author: Hordon Kim
Hordon Kim is an international editor at Power Electronics Magazine. He covers global news and events in English and runs a consulting agency in Korea.
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