EPC comes out with the 150 V EPC2308 designed for motor drive in power tools and robots, high density DC-DC from/to 80 V-100 V for industrial applications, synchronous rectification to 28 V – 54 V for chargers, adaptors and power supplies, smartphones USB fast chargers, and in solar optimizers and microinverters.
The EPC2308 GaN FET offers a super small RDS(on), of just 4.9 mOhm typical, together with very small QG, QGD, and QOSS parameters for low conduction and switching losses. The device features a thermally enhanced QFN package with footprint of just 3 mm x 5 mm, offering an extremely small solution size for the highest power density applications.
The package offers wettable flanks to simplify assembly and inspection and exposed top and ultra-low thermal resistances to optimize thermal dissipation through heatsink for cooler operations.
The EPC2308 combines the advantages of 150 V GaN with an easy to assemble and thermally enhanced QFN package. Designers can use our family of packaged GaN FETs to make smaller and lighter weight battery-operated BLDC motor drives for robotics and power tools, higher efficiency 80 V input DC-DC converters, and higher efficiency USB chargers and power supply.
The EPC90148 development board is a half bridge featuring EPC2308 GaN FET. It is designed for 150 V maximum device voltage and 12 A maximum output current. The purpose of this board is to simplify the evaluation process to speed time to market. This 2” x 2” (50.8 mm x 50.8 mm) board is designed for optimal switching performance and contains all critical components for easy evaluation.
Price and Availability
The EPC2308 is priced at $3.75 each in 1 Ku volumes.
The EPC90148 development board is priced at $200.00 each.