Richardson RFPD announces new SCALE-iDriver SiC-MOSFET gate driver from Power Integrations

Richardson RFPD ( announced the availability and full design support capabilities for a new gate driver integrated circuit from Power Integrations, Inc.

SIC1182K SCALE-iDriver

SIC1182K SCALE-iDriver

The SIC1182K SCALE-iDriver™ is a high-reliability, single-channel silicon carbide (SiC) MOSFET gate driver that delivers the industry-leading peak-output gate current without an external boost stage.

The new device is available in an eSOP-R16B package. Reinforced galvanic isolation is provided by Power Integrations’ robust solid insulator FluxLink™ technology. Up to +/-8 A peak output drive current enables the product to drive devices with nominal currents of up to 600 A (typical).

The SIC1182K is suitable for several key industrial applications, including general purpose and servo drives, UPS, PV, welding inverters and power supplies.

Additional key features of the SIC1182K include:

· Advanced active clamping
· UVLO primary and secondary side
· Over-current fault turn-off
· Short-circuit current fault turn-off
· Rail-to-rail stabilized output voltage
· Unipolar supply voltage for secondary side
· Suitable for 600 V / 650 V / 1200 V SiC MOSFET switches
· Up to 150 kHz switching frequency
· Propagation delay jitter ±5 ns
· -40 °C to +125 °C operating ambient temperature
· High common-mode transient immunity
· eSOP package with 9.5 mm creepage and clearance

To find more information or to purchase this product today online, please visit the SIC1182K webpage.

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