Microsemi’s Silicon Carbide (SiC) chips enable high-voltage, reliable power electronics

Demand is growing for SiC power products that improve system efficiency, robustness and power density in automotive, industrial and aerospace and defense applications.

Microchip's 700 V SiC MOSFET

Microsemi (www.microsemi.com) announced the production release of a family of SiC power devices that offer proven ruggedness and the performance benefits of wide-bandgap technology.

Complemented by Microchip’s broad range of microcontrollers (MCUs) and analog solutions, the SiC devices join a growing family of reliable SiC products that meet the needs of Electric Vehicles (EVs) and other high-power applications in fast-growing markets.

Microchip’s 700 V SiC MOSFETs and 700 V and 1200 V SiC Schottky Barrier Diodes (SBDs) join its existing portfolio of SiC power modules. The more than 35 discrete products are available in volume, supported by comprehensive development services, tools and reference designs, and offer outstanding ruggedness proven through rigorous testing. The company now offers a broad family of SiC die, discretes and power modules across a range of voltage, current ratings and package types.

Microchip’s SiC MOSFETs and SBDs offer more efficient switching at higher frequencies and pass ruggedness tests at levels considered critical for guaranteeing long-term reliability. Its SiC SBDs perform approximately 20 percent better than other SiC diodes in these Unclamped Inductive Switching (UIS) ruggedness tests that measure how well devices withstand degradation or premature failure under avalanche conditions, which occur when a voltage spike exceeds the device’s breakdown voltage.

Microchip’s SiC MOSFETs also outperform alternatives in these ruggedness tests, demonstrating excellent gate oxide shielding and channel integrity with little lifetime degradation in parameters even after 100,000 cycles of Repetitive UIS (RUIS) testing.

Hordon Kim, hordon@powerelectronics.co.kr

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