Toshiba Corporation’s (http://goo.gl/UDmjza) Semiconductor & Storage Products Company today announced the launch of “TPD7104F”, a 1-channel high-side N-channel power MOSFET gate driver. The new product is an all-in-one circuit for charge pumps and can be operated at lower voltages compared to Toshiba conventional products, at VDD(opr) = 5 to 18V. Shipment starts from today.

Toshiba Launches 1-Channel High-Side N-Channel Power MOSFET Gate Driver for Automotive Applications

Key Specifications of the New Product

1. BiCD 0.13μm process
2. Supply voltage: VDD(opr)=5 to 18V
3. Built-in overcurrent protection functions
4. Built-in overcurrent diagnostic functions
5. Output voltage
VOUT=VDD+8V(Min)@VDD=5V, IOUT=-100μA, Tj=-40 to 125°C
VOUT=VDD+10V(Min)@VDD=8 to 18V, IOUT=-100μA, Tj=-40 to 125°C
6. Small package
PS-8 (2.8mm x 2.9mm)

Applications

Automotive applications for driving high-side N-channel MOSFETs used in 12V batteries, including semiconductor relays and semiconductor load switches for idle stop systems and electric power steering (EPS).

 

by Power Electronics Korea magazine, news@powerelectronics.co.kr

 

 




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